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MITSUBISHI Nch POWER MOSFET
FS50VSJ-3
HIGH-SPEED SWITCHING USE
FS50VSJ-3
OUTLINE DRAWING
1.5MAX.
Dimensions in mm
4.5 1.3
r
10.5MAX.
1.5MAX. 8.6 0.3 9.8 0.5
3.0 +0.3 -0.5
0 -0
+0.3
1 5 0.8
B
0.5
qwe wr
2.6 0.4
4V DRIVE VDSS ................................................................................ 150V rDS (ON) (MAX) .............................................................. 30m ID ......................................................................................... 50A Integrated Fast Recovery Diode (TYP.) ........... 125ns
q
q GATE w DRAIN e SOURCE r DRAIN e
TO-220S
APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc.
MAXIMUM RATINGS
Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg --
(Tc = 25C)
Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 150 20 50 200 50 50 200 125 -55 ~ +150 -55 ~ +150 1.2
4.5
Unit V V A A A A A W C C g
Feb.1999
L = 100H
(1.5)
MITSUBISHI Nch POWER MOSFET
FS50VSJ-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25C)
Test conditions ID = 1mA, VGS = 0V VGS = 20V, VDS = 0V VDS = 150V, VGS = 0V ID = 1mA, VDS = 10V ID = 25A, VGS = 10V ID = 25A, VGS = 4V ID = 25A, VGS = 10V ID = 25A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz
Limits Min. 150 -- -- 1.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 1.5 23 24 0.58 62 8200 870 440 54 110 850 340 1.0 -- 125 Max. -- 0.1 0.1 2.0 30 32 0.75 -- -- -- -- -- -- -- -- 1.5 1.00 --
Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns
Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time
VDD = 80V, ID = 25A, VGS = 10V, RGEN = RGS = 50
IS = 25A, VGS = 0V Channel to case IS = 50A, dis/dt = -100A/s
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE 200 MAXIMUM SAFE OPERATING AREA 3 2
POWER DISSIPATION PD (W)
160
DRAIN CURRENT ID (A)
120
102 7 5 3 2 101 7 5 3 2
tw = 10ms
100ms
1ms 10ms
80
40
0
0
50
100
150
200
100 DC 7 TC = 25C 5 Single Pulse 30 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) 50
VGS = 10V 5V 4V 3V
CASE TEMPERATURE TC (C) OUTPUT CHARACTERISTICS (TYPICAL) 100
VGS = 10V 5V 4V TC = 25C Pulse Test
DRAIN CURRENT ID (A)
80
DRAIN CURRENT ID (A)
40
60
3V
30
40
PD = 125W
20
2.5V
20
10
TC = 25C Pulse Test
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50VSJ-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 2.0
ID = 100A
ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) 40
TC = 25C Pulse Test
1.6
80A
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (m)
DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V)
32
1.2
50A
24
VGS = 4V 10V
0.8
16
0.4
TC = 25C Pulse Test
20A
8 0
0
0
2
4
6
8
10
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE VGS (V)
TRANSFER CHARACTERISTICS (TYPICAL) 100
TC = 25C VDS = 10V Pulse Test
FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) 102 7 5 4 3 2 101 7 5 4 3 2
VDS = 10V Pulse Test TC = 25C 75C 125C
DRAIN CURRENT ID (A)
60
40
20
FORWARD TRANSFER ADMITTANCE yfs (S)
80
0
0
2
4
6
8
10
100
100
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 2 104 7 5 3 2
Ciss
SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 103 7 5 3 2 102 7 5 3 2 101 0 10 23
td(off) tf Tch = 25C VDD = 80V VGS = 10V RGEN = RGS = 50
Coss
103 7 5 3 2
Crss
SWITCHING TIME (ns)
CAPACITANCE Ciss, Coss, Crss (pF)
tr td(on)
102 7 Tch = 25C 5 f = 1MHZ 3 VGS = 0V 2 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V)
5 7 101
23
5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50VSJ-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 100
SOURCE CURRENT IS (A)
VGS = 0V Pulse Test TC = 125C
10
Tch = 25C ID = 50A VDS = 50V
8
80
6
80V 100V
60
75C 25C
4
40
2
20
0
0
40
80
120
160
200
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (tC)
ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 VGS = 10V ID = 1/2ID 5 Pulse Test 3 2 100 7 5 3 2 10-1 -50 0 50 100 150 2.0
GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V)
THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL)
VDS = 10V ID = 1mA
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
CHANNEL TEMPERATURE Tch (C)
CHANNEL TEMPERATURE Tch (C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C)
TRANSIENT THERMAL IMPEDANCE Zth (ch - c) (C/ W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (tC)
BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 1.4
VGS = 0V ID = 1mA
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 100 7 0.5 5 3 0.2 2 0.1 10-1 7 5 3 2
D = 1.0
1.2
1.0
0.8
PDM
tw
0.6
0.05 0.02 0.01 Single Pulse
T D= tw T
0.4
-50
0
50
100
150
10-2 -4 10 2 3 5710-3 2 3 5710-22 3 5710-12 3 57100 2 3 57101 2 3 57102 PULSE WIDTH tw (s)
Feb.1999
CHANNEL TEMPERATURE Tch (C)

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